STP2NA50

STP2NA50 STP2NA50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA T YPE ST P2NA50 ST P2NA50FI s s s s s s s V DSS 500 V 500 V R DS(o n) <4Ω <4 Ω ID 2.8 A 2A TYPICAL RDS(on) = 3.25 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 1 2 3 1 2 3 APPLICATIONS s MEDIUM CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CONSUMER AND INDUSTRIAL LIGHTING ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( ) P t ot V ISO T stg Tj Parameter STP2NA50 Drain-Source Voltage (V gs = 0) Drain-Gate Voltage (Rgs = 20 KΩ ) Gate-Source Voltage Drain-Current (continuous) at Tc = 25 C Drain-Current (continuous) at Tc = 100 C Drain-Current (Pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation W ithstand Voltage (DC) Storage T emperature Max Operating Junction T emperature o o o Value STP2NA50F I 500 500 ± 30 2.8 1.8 11.2 75 0.6 -65 to 150 150 2 1.25 11.2 35 0.28 4000 Unit V V V A A A W W/ o C V o o C C ()Pulse width limited by safe operating area March 1996 1/6 STP2NA50/FI THERMAL DATA TO 220 R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Max 1.67 62.5 0.5 300 IS OW ATT 220 3.57 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AV...