MS2575
RF PRODUCTS DIVISION
RF & MICROWAVE TRANSISTORS
P RODUCT P REVIEW
DESCRIPTION
KEY FEATURES
W W W. Microsemi ....
MS2575
RF PRODUCTS DIVISION
RF & MICROWAVE
TRANSISTORS
P RODUCT P REVIEW
DESCRIPTION
KEY FEATURES
W W W. Microsemi . COM
The MS2575 is a medium power Class C
transistor designed specifically for pulsed L-Band avionics applications.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The MS2575 is housed in the IMPAC package with internal input matching.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Refractory/Gold Metallization Emitter Site Ballasted ∞ :1 VSWR Capability Low Thermal Resistance Input Matching Overlay Geometry Metal/Ceramic Hermetic Package POUT = 35 W Min. GP = 10.7 dB Gain
APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS
Avionics Applications
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol PDISS IC VCC TJ TSTG
Parameter Power Dissipation ( T C ≤ 100 ° C) Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA
Value 150 3.0 55 250 -65 to +150
Unit W A V °C °C
RTH(j-c)
Note:
Junction-Case Thermal Resistance
1.0
°C/W
Applies only to rated RF amplifier operation Thermal Resistance determined by Infra-Red Scanning of Hot Spot Junction Temperature at rated RF operating conditions.
PIN CONNECTION 1
MS2575
4 3
2
1. COLLECTOR 3. EMITTER 2. BASE 4. BASE
Copyright 2000 MSC1666.PDF 2001-01-24
Microsemi
RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215...
