Part Number |
MB84VA2106 |
Manufacturers |
Fujitsu Media Devices |
Logo |
|
Description |
(MB84VA2106 / MB84VA2107) 16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM |
Datasheet |
MB84VA2106 Datasheet (PDF) |
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-50109-1E
MCP (Multi-Chip Package) FLASH MEMORY & SRAM
CMOS
16M (×16) FLASH MEMORY & 1M (× 8) STATIC RAM
MB84VA2106-10/MB84VA2107-10
s FEATURES
• Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature –20 to +85°C — FLASH MEMORY • Minimum 100,000 write/erase cycles • Sector erase architecture One 8 K word, two 4 K words, one 16 K word, and thirty one 32 K words. Any combination of sectors can be concurrently erased. Also supports full chip erase. • Boot Code Sector Architecture MB84VA2106: Top sector MB84VA2107: Bottom sector • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address • Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Ready-Busy output (RY/BY) Hardware method for detection of program or erase cycle completion • Automat.