Part Number |
MB84VB2000 |
Manufacturers |
Fujitsu Media Devices |
Logo |
|
Description |
(MB84VB2000 / MB84VB2001) 8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY |
Datasheet |
MB84VB2000 Datasheet (PDF) |
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-50102-2E
MCP (Multi-Chip Package) FLASH MEMORY
CMOS
8M (× 8/× 16) FLASH MEMORY & 8M (× 8/× 16) FLASH MEMORY
MB84VB2000-10/MB84VB2001-10
s FEATURES
• Contain 2 chips of MBM29LV800A, and each chip have separate CE. • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature –40 to +85°C • Minimum 100,000 write/erase cycles • Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes × 2 chips Any combination of sectors can be concurrently erased. Also supports full chip erase. • Boot Code Sector Architecture MB84VB2000: Top sector MB84VB2001: Bottom sector • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address • Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Ready/Busy output (RY/BY) Hardware metho.