MRF545

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF545 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon PNP, high Frequency, high breakdown, To-39 packaged, Transistor Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz High Collector Base Breakdown Voltage - BVCBO = 100 V (min) High FT - 1400 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 70 100 3.0 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC Storage Temperature Range -65 to +200 ºC 3.5 20 Watts mW/ ºC Tstg MSC1315.PDF 10-25-99 MRF545 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO ICES Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) 70 100 3.0 Value Typ. 1.0 Max. 20 100 Unit Vdc Vdc Vdc µA µA (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 6.0 Vdc) 15 - DYNAMIC Symbol Test C...