Document
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MRF544
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • • • Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz High Collector Base Breakdown Voltage - BVCBO = 100 V (min) High FT - 1400 MHz
1. Emitter 2. Base 3. Collector
TO-39
DESCRIPTION:
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 70 100 3.0 400 Unit Vdc Vdc Vdc mA
Thermal Data
P
D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 3.5 20 Watts mW/ ºC
MSC1314.PDF 10-25-99
MRF544
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC (off)
Symbol BVCEO BVCBO BVEBO ICBO ICES Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) 70 100 3.0 Value Typ. 1.0 Max. 20 100 Unit Vdc Vdc Vdc µA µA
(on)
HFE DC Current Gain (IC = 50 mAdc, VCE = 6.0 Vdc) 15 -
DYNAMIC
Symbol Test Conditions Min. COB CIB fT Output Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) Input Capacitance (VEB = 3Vdc, IE=0, f=1 MHz) Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 250 MHz) 1000 Value Typ. 2.5 6.1 1500 Max. Unit pF pF MHz
MSC1314.PDF 10-25-99
MRF544
FUNCTIONAL
Symbol Test Conditions Min. Maximum Unilateral Gain Maximum Available Gain Insertion Gain
IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz
Value Typ. 13.5 13.5 12.7 Max. Unit dB dB dB
G
U max
11.7
MAG
2
|S21|
Table 1. Common Emitter S-Parameters, @ VCE = 25 V, IC = 50 mA
f
S11
(MHz)
100 200 300 400 500 600 700 800 900 1000
|S11| 0.221 0.219 0.250 0.329 0.338 0.348 0.371 0.374 0.402 0.438
∠φ -143 -108 -72 -34 9 51 94 140 -170 -126
S21
|S21| 8.54 4.36 2.98 2.39 2.11 1.83 1.61 1.44 1.45 1.56
∠φ 97 87 79 72 70 65 61 59 63 64
S12
|S12| 0.047 0.091 0.141 0.178 0.237 0.292 0.35 0.383 0.428 0.503
∠φ 82 87 87 84 87 86 86 85 88 86
S22
|S22| 0.508 0.413 0.406 0.445 0.409 0.412 0.411 0.413 0.386 0.405
∠φ 14 49 82 108 140 176 -147 -112 -78 -42
MSC1314.PDF 10-25-99
MRF544
MSC1314.PDF 10-25-99
.