STP16NE06L

STP16NE06L STP16NE06L/FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE™ POWER MOSFET TARGET DATA TYPE ST P16NE06L ST P16NE06LFP s s s s s s V DSS 60 V 60 V R DS(on) < 0.12 Ω < 0.12 Ω ID 16 A 11 A TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220 1 2 3 1 2 3 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( ) P t ot V ISO dV/dt T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating F actor Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. O perating Junction Temperature o o o TO-220FP INTERNAL SCHEMATIC DIAGRAM Value ST P16NE06L STP16NE06LF P 60 60 ± 15 16 10 64 60 0.4  6 -65 to 175 175 ( 1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj...