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STP16NS25 Dataheets PDF



Part Number STP16NS25
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL 250V - 0.23ohm - 16A TO-220 / TO-220FP MESH OVERLAY MOSFET
Datasheet STP16NS25 DatasheetSTP16NS25 Datasheet (PDF)

N-CHANNEL 250V - 0.23Ω - 16A TO-220 / TO-220FP MESH OVERLAY™ MOSFET TYPE STP16NS25 STP16NS25FP s s s STP16NS25 STP16NS25FP VDSS 250 V 250 V RDS(on) < 0.28 Ω < 0.28 Ω ID 16 A 16 A TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 1 3 2 1 3 2 TO-220 DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Comp.

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N-CHANNEL 250V - 0.23Ω - 16A TO-220 / TO-220FP MESH OVERLAY™ MOSFET TYPE STP16NS25 STP16NS25FP s s s STP16NS25 STP16NS25FP VDSS 250 V 250 V RDS(on) < 0.28 Ω < 0.28 Ω ID 16 A 16 A TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 1 3 2 1 3 2 TO-220 DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications. TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT s IDEAL FOR MONITOR’s B+ FUNCTION ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tstg Tj Parameter STP16NS25 Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature –65 to 150 (1) ISD≤ 16A, di/dt≤300 A/ µs, VDD≤ V(BR)DSS , Tj≤TjMAX (*) Limited only by maximum temperature allowed Value STP16NS25FP 250 250 ± 20 16 11 64 140 1 5 2500 16(*) 11(*) 64(*) 40 0.33 Unit V V V A A A W W/°C V/ns V °C (•)Pulse width limited by safe operating area May 2002 1/9 STP16NS25 - STP16NS25FP THERMAL DATA TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.9 62.5 300 TO-220FP 3 °C/W °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 16 600 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20 V Min. 250 1 10 ±100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 8 A Min. 2 Typ. 3 0.23 Max. 4 0.28 Unit V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 8 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 15 1270 190 74 Max. Unit S pF pF pF 2/9 STP16NS25 - STP16NS25FP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 125 V, ID = 8 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 200V, ID = 16 A, VGS = 10V Min. Typ. 14.5 26 59 7.9 22.3 83 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(Voff) tf tr(Voff) tf tc Parameter Turn-off- Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 125V, ID = 8 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) Vclamp = 200V, ID = 16 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. Typ. 72 32 24 28 56 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 16 A, VGS = 0 ISD = 16 A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see test circuit, Figure 5) 270 1.5 11.4 Test Conditions Min. Typ. Max. 16 64 1.5 Unit A A V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area for TO-220 Safe Operating Area for TO-220FP 3/9 STP16NS25 - STP16NS25FP Thermal Impedance for TO-220 Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/9 STP16NS25 - STP16NS25FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STP16NS25 - STP16NS25FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STP16NS25 - STP16NS25FP TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 .


ESM7545DV STP16NS25 STP16NS25FP


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