DatasheetsPDF.com

13003BR

Part Number	13003BR
Manufacturer	ETC
Description	MJE13003BR
Features	Power dissipation PCM : 1.25 NPN SILICON TRANSISTOR TO 126 W Tamb=25 1.BASE 2.COLLECTOR 3.EMITTER Collector current...
Published	Oct 15, 2005
Datasheet	13003BR PDF File

Features

Power dissipation PCM : 1.25 NPN SILICON TRANSISTOR TO 126 W Tamb=25 1.BASE 2.COLLECTOR 3.EMITTER Collector current 1.5 A ICM : Collector-base voltage V(BR)CBO : 700 V 123 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage C...

Similar Datasheet

13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR - STMicroelectronics
13003 NPN Epitaxial Silicon Transistor - Elite Enterprises
13003 HIGH VOLTAGE AND HIGH SPEED SWITCH - HSiN
13003AD Bipolar Junction Transistor - Jingdao
13003ADA NPN SILICON TRANSISTOR - Unisonic Technologies
13003ADG NPN SILICON TRANSISTOR - Unisonic Technologies
13003BDG NPN SILICON TRANSISTOR - Unisonic Technologies
13003BR MJE13003BR - ETC
13003BS NPN SILICON TRANSISTOR - Unisonic Technologies
13003CDH NPN SILICON TRANSISTOR - Unisonic Technologies

INDEX :5 7 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)