N-channel Enhancement Mode Field Effect Transistor
Description
CEP02N6/CEB02N6
Sep. 2002
4
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 2A , RDS(ON)=5Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
D
G
D G
G D S
S
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS (Tc=25...
