CEP04N6

CEP04N6/CEB04N6 CEF04N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP04N6 CEB04N6 CEF04N6 VDSS 600V 600V 600V RDS(ON) 2.4Ω 2.4Ω 2.4Ω ID 4.2A 4.2A 4.2A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 VDS 600 VGS ±30 ID 4.2 2.6 IDM e 16.8 104 PD 0.83 TO-220F 4.2 d 2.6 d 16.8 d 35 0.28 Single Pulsed Avalanche Energy g Single Pulsed Avalanche Current g Operating and Store Temperature Range EAS IAS TJ,Tstg 242 4.4 -55 to 150 Thermal Characteristics Parameter Thermal Resist...