MPSH17

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSH17/D CATV Transistor NPN Silicon COLLECTOR 3 1 BASE 2 EMITTER MPSH17 Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO PD TJ, Tstg Value 15 20 3.0 350 2.81 – 55 to +150 Unit Vdc Vdc Vdc mW mW/°C °C 1 2 3 CASE 29–04, STYLE 2 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Printed Circuit Board Mounting) Symbol RqJA Max 357 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 15 20 3.0 — — — — — — — — 100 Vdc Vdc Vdc nAdc Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPSH17 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) Collector–Emitter Saturation Voltage (IC = 10 mAd...