MPSH10

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSH10 NPN 1 GHz general purpose switching transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1998 Aug 27 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor FEATURES Low cost High power gain. DESCRIPTION Silicon NPN general purpose transistor in a SOT54 (TO-92) package. PNP complement is the MPSH81. PINNING PIN 1 2 3 DESCRIPTION collector emitter base page MPSH10 1 2 3 MSB033 Marking code: PSH10. Fig.1 SOT54. QUICK REFERENCE DATA SYMBOL VCBO VCEO VEBO Ptot Tj hFE Cre Crb fT rbCc Note 1. Ts is the temperature at the soldering point of the collector lead, 4 mm from the body. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector lead, 4 mm from the body. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts = 25 °C; note 1 open base open collector CONDITIONS open emitter MIN. − − − − − −65 − MAX. 30 25 3 40 1 +150 150 UNIT V V V mA W °C °C PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage total power dissipation junction temperature DC current gain collector-base feedback capacitance transition frequency collector-base time constant VC...