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2SD2639 Dataheets PDF



Part Number 2SD2639
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet 2SD2639 Datasheet2SD2639 Datasheet (PDF)

Ordering number : ENN6960 2SB1683 / 2SD2639 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features • • Package Dimensions unit : mm 2010C [2SB1683 / 2SD2639] 10.2 3.6 5.1 2.7 6.3 4.5 Wide ASO because of on-chip ballast resistance. Good dependence of fT on current and good HF characteristic. 1.3 18.0 5.6 1.2 14.0 0.8 15.1 0.4 1 2 3 2.7 Specifications ( ) : 2SB1683 Abso.

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Ordering number : ENN6960 2SB1683 / 2SD2639 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features • • Package Dimensions unit : mm 2010C [2SB1683 / 2SD2639] 10.2 3.6 5.1 2.7 6.3 4.5 Wide ASO because of on-chip ballast resistance. Good dependence of fT on current and good HF characteristic. 1.3 18.0 5.6 1.2 14.0 0.8 15.1 0.4 1 2 3 2.7 Specifications ( ) : 2SB1683 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 2.55 1 : Base 2 : Collector 3 : Emitter 2.55 SANYO : TO-220 Ratings (--)160 (--)140 (--)6 (--)12 (--)15 80 150 --40 to +150 Tc=25°C Unit V V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)80V, IE=0 VEB=(--)4V, IC=0 Ratings min typ max (--)0.1 (--)0.1 Unit mA mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62501 TS IM TA-3139, 3140 No.6960-1/4 2SB1683 / 2SD2639 Continued from preceding page. Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitter Saturation Voltage Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Fall Time Storage Time Symbol hFE1 hFE2 fT Cob VBE VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tf tstg Conditions VCE=(--)5V, IC=(--)1A VCE=(--)5V, IC=(--)6A VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz VCE=(--)5V, IC=(--)1A IC=(--)5A, IB=(--)0.5A IC=(--)5mA, IE=0 IC=(--)5mA, RBE=∞ IC=(--)50mA, RBE=∞ IE=(--)5mA, IC=0 See specified test circuit. See specified test circuit. See specified test circuit. Ratings min 60* 20 typ max 200* Unit 15 (300)210 (1.1)0.6 (--)160 (--)140 (--)140 (--)6 (0.25)0.26 (0.53)0.68 (1.61)6.88 1.5 2.5 MHz pF V V V V V V µs µs µs * : The 2SB1683 / 2SD2639 are classified by 1A hFE as follows : Rank hFE D 60 to 120 E 100 to 200 Switching Time Test Circuit IB1 PW=20µs D.C.≤1% Input 51Ω VR 200Ω IB2 RB 1Ω + 1µF + 1µF RL 20Ω VCC=20V Output 10IB1= --10IB2=IC=1A VBE=--2V (For PNP, the polarity is reversed) --10 IC -- VCE 2SB1683 10 IC -- VCE 200mA A m 0 16 mA 120 80mA A Collector Current, IC -- A --2 4 --6 Collector Current, IC -- A --8 A 00m A --2 m 0 --16 --120mA 0m 8 6 --80mA --4 24 0m A 2SD2639 40mA 4 --40mA --20mA --2 20mA 2 0 0 --10 --20 --30 IB=0 --40 IT03152 0 0 10 20 30 40 IT03153 Collector-to-Emitter Voltage, VCE -- V --7 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 7 IC -- VBE --6 2SB1683 VCE= --5V Collector Current, IC -- A 6 2SD2639 VCE=5V Collector Current, IC -- A --5 5 --4 4 --3 3 --2 2 --1 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Base-to-Emitter Voltage, VBE -- V IT03154 Base-to-Emitter Voltage, VBE -- V IT03155 No.6960-2/4 2SB1683 / 2SD2639 5 f T -- IC Gain-Bandwidth Product, f T -- MHz 2SB1683 VCE= --5V 5 3 2 f T -- IC 2SD2639 VCE=5V Gain-Bandwidth Product, f T -- MHz 3 2 10 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 1000 7 5 --10 IT03156 7 1.0 0.1 2 3 5 7 1.0 2 3 5 hFE -- IC Collector Current, IC -- A 1000 7 10 IT03157 hFE -- IC 2SB1683 VCE= --5V DC Current Gain, hFE 7 5 3 2 2SD2639 VCE=5V DC Current Gain, hFE 3 2 100 7 5 3 2 100 7 5 3 2 10 --0.1 10 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 2 7 --10 2 IT03158 0.1 2 3 5 7 1.0 2 3 5 7 10 2 IT03159 Cob -- VCB Collector Current, IC -- A 2 Cob -- VCB 2SB1683 f=1MHz Output Capacitance, Cob -- pF 7 5 3 2 2SD2639 f=1MHz Output Capacitance, Cob -- pF 2 3 5 7 2 3 5 7 1000 1000 7 5 3 2 100 7 5 3 2 --1.0 --10 --100 IT03160 100 7 5 3 2 1.0 2 3 5 7 10 2 3 5 7 100 IT03161 Collector-to-Base Voltage, VCB -- V 3 2 VCE(sat) -- IC Collect.


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