2SB1683

Ordering number : ENN6960 2SB1683 / 2SD2639 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features Package Dimensions unit : mm 2010C [2SB1683 / 2SD2639] 10.2 3.6 5.1 2.7 6.3 4.5 Wide ASO because of on-chip ballast resistance. Good dependence of fT on current and good HF characteristic. 1.3 18.0 5.6 1.2 14.0 0.8 15.1 0.4 1 2 3 2.7 Specifications ( ) : 2SB1683 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 2.55 1 : Base 2 : Collector 3 : Emitter 2.55 SANYO : TO-220 Ratings (--)160 (--)140 (--)6 (--)12 (--)15 80 150 --40 to +150 Tc=25°C Unit V V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)80V, IE=0 VEB=(--)4V, IC=0 Ratings min typ max (--)0.1 (--)0.1 Unit mA mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or materi...