DRAM Module
DRAM MODULE
KMM372F213CK/CS EDO Mode 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
GENERAL DESCRIPTION
The Sam...
Description
DRAM MODULE
KMM372F213CK/CS EDO Mode 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
GENERAL DESCRIPTION
The Samsung KMM372F213C is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F213C consists of nine CMOS 2Mx8bits DRAMs in SOJ/TSOP-II 300mil package, and two 16bits driver IC in 48pin TSSOP package mounted on a 168-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM372F213C is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets.
KMM372F213CK/CS
FEATURES
Part Identification - KMM372F213CK (2048 cycles/32ms Ref., SOJ) - KMM372F213CS (2048 cycles/32ms Ref., TSOP) Fast Page Mode with Extended Data Out Mode Operation CAS-before-RAS Refresh capability RAS-only and Hidden refresh capability LVTTL compatible inputs and outputs Single 3.3V±0.3V power supply JEDEC standard pinout & Buffered PDpin Buffered input except RAS and DQ
PERFORMANCE RANGE
Speed -5 -6
tRAC
50ns 60ns
tCAC
18ns 20ns
tRC
84ns 104ns
tHPC
20ns 25ns
PCB : Height(1000mil), Single sided component
PIN CONFIGURATIONS
Pin Front Pin Front Pin Front Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 VSS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VCC DQ14 DQ15 DQ16 DQ17 VSS RSVD RSVD VCC W0 CAS0 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 RSVD RAS0 OE0 VSS A0 A2...
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