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KMM372F803BS

Samsung Semiconductor

DRAM Module

DRAM MODULE KMM372F80(8)3BK/BS KMM372F80(8)3BK/BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3...


Samsung Semiconductor

KMM372F803BS

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Description
DRAM MODULE KMM372F80(8)3BK/BS KMM372F80(8)3BK/BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION The Samsung KMM372F80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F80(8)3B consists of nine CMOS 8Mx8bits DRAMs in SOJ/TSOP-II 400mil packages and two 16 bits driver IC in TSSOP package mounted on a 168-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM372F80(8)3B is a Dual In-line Memory Module and is intended for mounting into 168 pin edge connector sockets. FEATURES Part Identification Part number KMM372F803BK KMM372F803BS KMM372F883BK KMM372F883BS PKG SOJ TSOP SOJ TSOP Ref. 4K 8K CBR Ref. ROR Ref. 4K/64ms 4K/64ms 8K/64ms PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 18ns 20ns tRC 84ns 104ns tHPC 20ns 25ns Extended Data Out Mode Operation CAS-before-RAS Refresh capability RAS-only and Hidden refresh capability LVTTL compatible inputs and outputs Single 3.3V±0.3V power supply JEDEC standard pinout & Buffered PDpin Buffered input except RAS and DQ PCB : Height(1250mil), single sided component PIN CONFIGURATIONS Pin Front Pin Front Pin Front Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 VSS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VCC DQ14 DQ15 DQ16 DQ17 VSS RSVD RSVD VCC W0 CAS0 29 *CAS2 57 30 RAS0 58 31 OE0 59 60 VSS 32 61 A0 33 62 A2 34...




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