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T1235H Dataheets PDF



Part Number T1235H
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description 12A TRIAC
Datasheet T1235H DatasheetT1235H Datasheet (PDF)

T1235H, T1250H High temperature 12 A Snubberless™ Triacs Features ■ Medium current Triac ■ 150 °C max. Tj turn-off commutation ■ Low thermal resistance with clip bonding ■ Very high 3 quadrant commutation capability ■ Packages are RoHS (2002/95/EC) compliant ■ UL certified (ref. file E81734) Applications Especially designed to operate in high power density or universal motor applications such as vacuum cleaner and washing machine drum motor, these 12 A Triacs provide a very high switching capab.

  T1235H   T1235H


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T1235H, T1250H High temperature 12 A Snubberless™ Triacs Features ■ Medium current Triac ■ 150 °C max. Tj turn-off commutation ■ Low thermal resistance with clip bonding ■ Very high 3 quadrant commutation capability ■ Packages are RoHS (2002/95/EC) compliant ■ UL certified (ref. file E81734) Applications Especially designed to operate in high power density or universal motor applications such as vacuum cleaner and washing machine drum motor, these 12 A Triacs provide a very high switching capability up to junction temperatures of 150 °C. The heatsink can be reduced, compared to traditional Triacs, according to the high performance at given junction temperatures. Description Available in through-hole or surface mount packages, the T1235H and T1250H Triac series are suitable for general purpose mains power ac switching. By using an internal ceramic pad, the T12xxH-6I provides voltage insulation (rated at 2500 V rms). A2 G A2 A1 A2 A2 G A1 D2PAK T12xxH-6G G A2 A1 TO-220AB T12xxH-6T G A2 A1 TO-220AB Insulated T12xxH-6I Table 1. Device summary Symbol Value Unit IT(RMS) 12 A VDRM/VRRM 600 V IGT 35 or 50 mA TM: Snubberless is a trademark of STMicroelectronics September 2011 Doc ID 13574 Rev 2 1/10 www.st.com 10 Characteristics 1 Characteristics T1235H, T1250H Table 2. Absolute maximum ratings Symbol Parameter Value IT(RMS) On-state rms current (full sine wave) ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I²t I²t Value for fusing dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns VDSM/VRSM Non repetitive surge peak off-state voltage D2PAK, TO-220AB Tc = 130 °C 12 TO-220AB Ins Tc = 120 °C F = 50 Hz t = 20 ms 120 F = 60 Hz t = 16.7 ms 126 tp = 10 ms 95 F = 120 Hz Tj = 150 °C 50 tp = 10 ms Tj = 25 °C VDRM/VRRM + 100 IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range tp = 20 µs Tj = 150 °C Tj = 150 °C 4 1 - 40 to + 150 - 40 to + 150 Unit A A A2s A/µs V A W °C Table 3. Symbol Electrical characteristics (Tj = 25 °C, unless otherwise specified) Test conditions Quadrant Value T1235H T1250H IGT (1) VGT VGD IH (2) VD = 12 V, RL = 33 Ω VD = VDRM, RL = 3.3 kΩ IT = 500 mA IL IG = 1.2 IGT dV/dt (2) (dI/dt)c (2) VD = 67% VDRM, gate open, Tj = 150 °C Without snubber, Tj = 150 °C I - II - III I - II - III I - II - III I - III II MAX. MAX. MIN. MAX. MAX. MIN. MIN. 35 50 1.0 0.15 35 75 50 90 80 110 1000 1500 16 21 1. minimum IGT is guaranted at 20% of IGT max. 2. for both polarities of A2 referenced to A1. Unit mA V V mA mA V/µs A/ms 2/10 Doc ID 13574 Rev 2 T1235H, T1250H Characteristics Table 4. Static characteristics Symbol VT (1) Vt0 (1) Rd (1) ITM = 17 A, tp = 380 µs Threshold voltage Dynamic resistance Test conditions IDRM IRRM (2) VDRM = VRRM VD/VR = 400 V (at peak mains voltage) VD/VR = 200 V (at peak mains voltage) 1. for both polarities of A2 referenced to A1 2. tp = 380 µs Tj = 25 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C MAX. MAX. MAX. MAX. MAX. MAX. MAX. Table 5. Thermal resistance Symbol Parameter Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient S = 1 cm2 D2PAK / TO-220AB TO-220AB Ins D2PAK TO-220AB / TO-220AB Ins Value 1.5 0.80 30 5 3.9 3.2 2.7 Value 1.4 3.3 45 60 Unit V V mΩ µA mA Unit °C/W Doc ID 13574 Rev 2 3/10 Characteristics T1235H, T1250H Figure 1. P(W) 14 α=180 ° 12 Maximum power dissipation versus Figure 2. on-state rms current (full cycle) IT(RMS) (A) 14 12 10 10 On-state rms current versus case temperature (full cycle) TO-220AB Insulated TO-220AB/D²PAK 8 8 6 6 4 180° 2 IT(RMS)(A) 0 0 1 2 3 4 5 6 7 8 9 10 11 12 4 2 α=180 ° 0 0 25 TC(°C) 50 75 100 125 150 Figure 3. On-state rms current versus ambient temperature IT(RMS) (A) 4.5 4.0 3.5 Epoxy printed circuit board FR4, copper thickness = 35 µm α=180 ° D²PAK SCU=1 cm² 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 Tamb(°C) 25 50 75 100 125 150 Figure 4. Variation of thermal impedance versus pulse duration Zth(°C/W) 1.0E+02 Zth(j-a) 1.0E+01 1.0E+00 Zth(j-c) 1.0E-01 1.0E-03 1.0E-02 1.0E-01 tP(s) 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 5. On-state characteristics (maximum values) Figure 6. Surge peak on-state current versus number of cycles ITM(A) 100 Tj=150 °C 10 Tj=25 °C VTM(V) Tj max. : Vt0 = 0.80 V Rd = 30 mΩ 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ITSM(A) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 1 Non repetitive Tj initial=25 °C Repetitive Tc=120 °C Number of cycles 10 100 t=20ms One cycle 1000 4/10 Doc ID 13574 Rev 2 T1235H, T1250H Characteristics Figure 7. Non-repetitive surge peak on-state Figure 8. current for a sinusoidal pulse with Relative variation of IGT,IH, IL vs junction temperature (typical values) ITSM(A), I².


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