Document
T1235H, T1250H
High temperature 12 A Snubberless™ Triacs
Features
■ Medium current Triac ■ 150 °C max. Tj turn-off commutation ■ Low thermal resistance with clip bonding ■ Very high 3 quadrant commutation capability ■ Packages are RoHS (2002/95/EC) compliant ■ UL certified (ref. file E81734)
Applications
Especially designed to operate in high power density or universal motor applications such as vacuum cleaner and washing machine drum motor, these 12 A Triacs provide a very high switching capability up to junction temperatures of 150 °C.
The heatsink can be reduced, compared to traditional Triacs, according to the high performance at given junction temperatures.
Description
Available in through-hole or surface mount packages, the T1235H and T1250H Triac series are suitable for general purpose mains power ac switching.
By using an internal ceramic pad, the T12xxH-6I provides voltage insulation (rated at 2500 V rms).
A2
G
A2
A1 A2
A2 G
A1
D2PAK T12xxH-6G
G A2 A1
TO-220AB T12xxH-6T
G A2 A1
TO-220AB Insulated T12xxH-6I
Table 1. Device summary
Symbol
Value
Unit
IT(RMS)
12
A
VDRM/VRRM
600
V
IGT
35 or 50
mA
TM: Snubberless is a trademark of STMicroelectronics
September 2011
Doc ID 13574 Rev 2
1/10
www.st.com
10
Characteristics
1
Characteristics
T1235H, T1250H
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
IT(RMS) On-state rms current (full sine wave)
ITSM
Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C)
I²t
I²t Value for fusing
dI/dt
Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns
VDSM/VRSM
Non repetitive surge peak off-state voltage
D2PAK, TO-220AB Tc = 130 °C 12
TO-220AB Ins
Tc = 120 °C
F = 50 Hz
t = 20 ms
120
F = 60 Hz
t = 16.7 ms
126
tp = 10 ms
95
F = 120 Hz
Tj = 150 °C
50
tp = 10 ms
Tj = 25 °C
VDRM/VRRM + 100
IGM
PG(AV)
Tstg Tj
Peak gate current
Average gate power dissipation
Storage junction temperature range Operating junction temperature range
tp = 20 µs
Tj = 150 °C Tj = 150 °C
4
1
- 40 to + 150 - 40 to + 150
Unit A
A A2s A/µs V A W °C
Table 3. Symbol
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Test conditions
Quadrant
Value T1235H T1250H
IGT (1) VGT VGD IH (2)
VD = 12 V, RL = 33 Ω
VD = VDRM, RL = 3.3 kΩ IT = 500 mA
IL
IG = 1.2 IGT
dV/dt (2) (dI/dt)c (2)
VD = 67% VDRM, gate open, Tj = 150 °C Without snubber, Tj = 150 °C
I - II - III I - II - III I - II - III
I - III II
MAX. MAX. MIN. MAX.
MAX.
MIN. MIN.
35
50
1.0
0.15
35
75
50
90
80
110
1000 1500
16
21
1. minimum IGT is guaranted at 20% of IGT max. 2. for both polarities of A2 referenced to A1.
Unit
mA V V mA
mA
V/µs A/ms
2/10
Doc ID 13574 Rev 2
T1235H, T1250H
Characteristics
Table 4. Static characteristics
Symbol
VT (1) Vt0 (1) Rd (1)
ITM = 17 A, tp = 380 µs Threshold voltage Dynamic resistance
Test conditions
IDRM IRRM (2)
VDRM = VRRM VD/VR = 400 V (at peak mains voltage)
VD/VR = 200 V (at peak mains voltage)
1. for both polarities of A2 referenced to A1
2. tp = 380 µs
Tj = 25 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C
MAX. MAX. MAX. MAX. MAX. MAX. MAX.
Table 5. Thermal resistance
Symbol
Parameter
Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient
S = 1 cm2
D2PAK / TO-220AB TO-220AB Ins D2PAK TO-220AB / TO-220AB Ins
Value 1.5 0.80 30 5 3.9 3.2 2.7
Value 1.4 3.3 45 60
Unit V V mΩ µA mA
Unit
°C/W
Doc ID 13574 Rev 2
3/10
Characteristics
T1235H, T1250H
Figure 1.
P(W) 14
α=180 ° 12
Maximum power dissipation versus Figure 2. on-state rms current (full cycle)
IT(RMS) (A) 14
12
10
10
On-state rms current versus case temperature (full cycle)
TO-220AB Insulated
TO-220AB/D²PAK
8
8
6
6
4
180°
2
IT(RMS)(A) 0
0 1 2 3 4 5 6 7 8 9 10 11 12
4
2 α=180 °
0
0
25
TC(°C)
50
75
100
125
150
Figure 3. On-state rms current versus ambient temperature
IT(RMS) (A) 4.5
4.0
3.5
Epoxy printed circuit board FR4, copper thickness = 35 µm
α=180 ° D²PAK SCU=1 cm²
3.0
2.5
2.0
1.5
1.0
0.5
0.0 0
Tamb(°C)
25
50
75
100
125
150
Figure 4. Variation of thermal impedance versus pulse duration
Zth(°C/W) 1.0E+02
Zth(j-a)
1.0E+01 1.0E+00
Zth(j-c)
1.0E-01 1.0E-03
1.0E-02
1.0E-01
tP(s) 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 5. On-state characteristics (maximum values)
Figure 6. Surge peak on-state current versus number of cycles
ITM(A) 100
Tj=150 °C
10
Tj=25 °C
VTM(V)
Tj max. : Vt0 = 0.80 V Rd = 30 mΩ
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
ITSM(A) 130 120 110 100
90 80 70 60 50 40 30 20 10
0 1
Non repetitive Tj initial=25 °C
Repetitive Tc=120 °C
Number of cycles
10
100
t=20ms One cycle
1000
4/10
Doc ID 13574 Rev 2
T1235H, T1250H
Characteristics
Figure 7.
Non-repetitive surge peak on-state Figure 8. current for a sinusoidal pulse with
Relative variation of IGT,IH, IL vs junction temperature
(typical values)
ITSM(A), I².