SD4600
RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS
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PRELIMINARY DATA
GOLD METALLIZATION 86...
SD4600
RF & MICROWAVE
TRANSISTORS CELLULAR BASE STATION APPLICATIONS
. . . . .
PRELIMINARY DATA
GOLD METALLIZATION 860-960 MHz 26 VOLTS EFFICIENCY 50% MIN. P OUT = 60 W MIN. WITH 7.5 dB GAIN
.438 x .450 2LFL (M173) epoxy sealed ORDER CODE BRANDING SD4600 SD4600
PIN CONNECTION
DESCRIPTION The SD4600 is designed for 960MHz mobile base stations in both analog and digital applications. Including double input and output matching networks, the SD4600 features high impedances allowing operation over the full 860 to 960 MHz bandwidth. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter
VCBO VCEO VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
60 28 3.5 8 146 +200 − 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 1.2 °C/W
*Applies only to rated RF amplifier operation
November 1992
1/4
SD4600
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC (Total Device)
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCEO I CEO hFE
IC = 100mA IE = 20mA IC = 100mA VCE = 25V VCE = 5V IC = 3A
60 3.5 28 — 25
— — — — —
— — — 30 80
V V V mA —
DYNAMIC (Total Device)
Symbol Test Conditions Value Min. Typ. Max. Unit
POUT ηc GP VSWR
f = 960MHz f = 960MHz f = 960MHz f = 960MHz
VCC = 26V VCC = 26V VCC = 26V VCC = 26V
ICQ = .200A ICQ = .200A ICQ = .200A
60 50 7.5 5:1
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