Document
PD - 9.1506
PRELIMINARY
l l l l l l l
IRFR/U9024N
HEXFET® Power MOSFET
D
Ultra Low On-Resistance P-Channel Surface Mount (IRFR9024N) Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated
VDSS = -55V RDS(on) = 0.175Ω
G S
ID = -11A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
D -P a k T O -2 52 A A I-P a k TO -2 5 1 A A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
-11 -8 -44 38 0.30 ± 20 62 -6.6 3.8 -10 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)** Junction-to-Ambient
Typ.
––– ––– –––
Max.
3.3 50 110
Units
°C/W
6/26/97
IRFR/U9024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆ TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -55 ––– ––– -2.0 2.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– -0.05 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 13 55 23 37 4.5 7.5 350 170 92 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 0.175 Ω VGS = -10V, ID = -6.6A -4.0 V VDS = VGS, I D = -250µA ––– S VDS = -25V, ID = -7.2A -25 VDS = -55V, VGS = 0V µA -250 VDS = -44V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 19 ID = -7.2A 5.1 nC VDS = -44V 10 VGS = -10V, See Fig. 6 and 13 ––– VDD = -28V ––– ID.