TetraFET
D2025UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
1
2
4
A
3
B
GOLD METALLISED MULTI-PURPOSE SILICON DMO...
TetraFET
D2025UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
1
2
4
A
3
B
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 400MHz SINGLE ENDED
FEATURES
D E F
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS
DW
PIN 1 PIN 3 DRAIN GATE PIN 2 PIN 4 SOURCE SOURCE
G
H
LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 13 dB MINIMUM
DIM A B C D E F G H
mm 26.16 5.72 45° 7.11 0.13 1.52 0.43 7.67
Tol. 0.38 0.13 5° 0.13 0.03 0.13 0.20 REF
Inches 1.030 0.225 45° 0.280 0.005 0.055 0.060 0.120
Tol. 0.015 0.005 5° 0.005 0.001 0.005 0.008 REF
APPLICATIONS
VHF/UHF COMMUNICATIONS from DC to 1GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 17.5W 65V ±20V 1A –65 to 150°C 200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
Document Number 5855 Issue 1
D2025UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA ...