AGB3300

AGB3300 50W High Linearity Low Noise Wideband Gain Block FEATURES · · · · · · · · · 250-3000 MHz Frequency Range +43 dBm Output IP3 Low Noise Figure: 2 dB at 900 MHz 14.5 dB Gain at 900 MHz (matched) +22 dBm P1dB SOT-89 Package Single +5V Supply Low Power: 700 mW Case Temperature: -40 to +85 oC Data Sheet - Rev 2.1 APPLICATIONS · · · · · Cellular Base Stations for CDMA, TDMA, GSM, PCS and CDPD systems Fixed Wireless MMDS/WLL WLAN, HyperLAN CATV S24 Package SOT-89 PRODUCT DESCRIPTION The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low distortion. With a high output IP3, low noise figure and wide band operation, the AGB3300 is ideal for 50 W wireless infrastructure applications such as Cellular Base Stations, MMDS, and WLL. Offered in a low cost SOT-89 surface mount package, the AGB3300 requires a single +5V supply, and typically consumes 700 mW of power. RF Input RF Output / Bias Figure 1: Block Diagram 06/2003 AGB3300 GND 4 1 RFIN 2 GND Figure 2: Pin Out 3 RFOUT Table 1: Pin Description PIN 1 2 3 4 N AME RFIN GND RFOUT GND D ESC R IPTION RF Input Ground RF Output / Bi as Ground 2 Data Sheet - Rev 2.1 06/2003 AGB3300 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PAR AMETER D evi ce Voltage RF Input Power Storage Temperature C hannel Temperature MIN 0 -40 - MAX +8 +15 +150 +150 U N IT VD C dB m °C °C Stresses in excess of the absolute ratings...