(IXFN80N50 / IXFN75N50) HiPerFET Power MOSFETs Single Die MOSFET
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
VDSS IXFN 80...
Description
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
VDSS IXFN 80N50 IXFN 75N50
D G S
ID25 80 A 75 A
RDS(on) 50 mΩ 55 mΩ
500 V 500 V
S
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Symbol
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 75N50 80N50 75N50 80N50
Maximum Ratings 500 500 ± 20 ± 30 75 80 300 320 80 64 6 5 700 -55 ... +150 150 -55 ... +150 V V V V A A A A A mJ J V/ns W °C °C °C V~ V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D
G = Gate S = Source
D = Drain
Either Source terminal of miniBLOC can be used as Main or Kelvin Source
Features International standard packages
miniBLOC, with Aluminium nitride
isolation Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS)
rated
50/60 Hz, RMS IISOL ≤ 1 mA
t = 1 min t=1s
2500 3000
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Low package inductance Fast intrinsic Rectifier
Applications DC-DC converters
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 TJ = 25°C TJ = 125°C 80N50 75N50 4 ± 200 100 2 50 55 V V nA µA mA mΩ mΩ
Battery chargers Switched-mode and...
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