FMM5017VF

FMM5017VF GaAs MMIC FEATURES High Output Power: 29dBm (typ.) High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5017VF is a MMIC amplifier designed for VSAT applications as a driver or output stage in the 14.0 to 14.5 GHz band. This device is well suited for designs that require less than 1 Watt and lower cost. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item DC Input Voltage DC Input Voltage Input Power Storage Temperature Operating Case Temperature Symbol VDD VGG Pin Tstg Top Rating 12 -7 17 -55 to +125 -40 to +85 Unit V V dBm °C °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Frequency Range Output Power at 1dB G.C.P. Linear Gain Gain Flatness Input VSWR Output VSWR Power Monitor DC Input Current DC Input Current CASE STYLE: VF Symbol f P1dB G ∆G VSWRi VSWRo Vmon IDD IGG Pout = 28.0dBm VDD = 10V VGG = -5V VDD = 10V VGG = -5V f = 14.0 to 14.5 GHz Test Conditions Min. 14.0 28.0 18.0 Limit Typ. Max. ~ 29.0 20.0 1.0 2:1 2.3:1 2.5 700 15 14.5 1.5 2.3:1 3:1 1000 20 Unit GHz dBm dB dB V mA mA Edition 1.1 August 1999 1 FMM5017VF GaAs MMIC OUTPUT POWER vs. FREQUENCY VDD=10V VGG=-5V P1dB OUTPUT POWER vs. INPUT POWER VDD=10V 30 VGG=-5V f=14.25GHZ Pin=12dBm 30 Output Power (dBm) 28 26 24 22 10dBm 8dBm Output Pow...