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IRL2203N

Part Number	IRL2203N
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Oct 7, 2005
Detailed Description	PD - 91366 IRL2203N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt...
Datasheet	IRL2203N PDF File

Overview

PD - 91366 IRL2203N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 7.
0mΩ G S ID = 116A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for a...

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