Document
FMM5701X
24GHz Low Noise Amplifier MMIC FEATURES
• Low Noise Figure: NF=1.4dB (Typ.) @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz
DESCRIPTION
The FMM5701X is a LNA MMIC designed for applications in the 18-28GHz frequency range. This product is well suited for satellite communications and radio link applications where low noise and high gain is required. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item Drain Voltage Gate Voltage Storage Temperature Channel Temperature Symbol VDD VGG Tstg Tch Condition Rating 7.0 -3.0 -65 to +175 +175 Unit V V °C °C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item Symbol Conditions (2) Min. Limits Typ. Max. 1.5 1.8 Unit
Noise Figure
NF VDD = 5V ID=12mA
f=24GHz
dB
Associated Gain
Gas
f=24GHz
12.0
13.5
-
dB
Note 1: RF parameters sample size 10pcs. criteria (accept/reject = (2/3) Note 2: Tuned for Γopt
NOISE FIGURE & Gas vs. FREQUENCY
VDD=5V, IDD=12mA (ZS=ZL=50Ω) (Tuned for Γopt)
10 9 8
30 25 Gas 20 15
Noise Figure (dB)
7 6 5 4 NF 3 2 1 0 10 12 14 16 18 20 22 24 26 28
5 0 -5 -10 -15 0 30
Frequency (GHz)
Edition 1.2 January 2000
1
Gas (dB)
10
FMM5701X
24GHz Low Noise Amplifier MMIC
S-PARAMETERS VDD = 5V, IDS = 12mA FREQUENCY (MHZ)
15000 16000 17000 18000 19000 20000 21000 22000 23000 24000 25000 26000 27000 28000 29000 30000
S11 MAG
.469 .492 .512 .542 .568 .598 .615 .640 .663 .683 .702 .722 .732 .737 .756 .762
S21 ANG MAG
8.289 7.642 6.987 6.487 5.950 5.456 5.027 4.634 4.258 3.919 3.638 3.318 3.033 2.820 2.595 2.370
S12 ANG MAG
.017 .018 .020 .021 .023 .025 .026 .028 .030 .032 .035 .038 .040 .044 .048 .051
S22 ANG
23.3 16.6 10.9 7.0 2.3 -3.6 -7.5 -10.9 -15.1 -17.9 -21.1 -27.0 -28.3 -31.7 -37.4 -40.3
MAG
.350 .330 .311 .296 .287 .283 .273 .268 .265 .262 .265 .267 .265 .266 .271 .270
ANG
-132.7 -138.4 -144.1 -149.0 -154.2 -160.2 -165.6 -170.8 -176.5 178.5 172.7 166.4 162.1 155.5 150.6 144.9
-131.8 -137.9 -145.8 -153.9 -162.7 -172.5 178.2 168.3 158.5 148.6 138.7 128.8 119.0 109.4 99.4 90.3
130.9 115.7 101.5 87.3 73.6 60.1 47.5 34.5 22.0 9.9 -2.2 -14.3 -25.1 -35.8 -47.7 -57.4
NOTE:* The data includes bonding wires.
n: number of wires RF IN n=1 (0.3mm length, 25µm Dia Au wire) RF OUT n=1 (0.3mm length, 25µm Dia Au wire) GND n=6 (0.3mm length, 25µm Dia Au wire)
Download S-Parameters, click here
BONDING LAYOUT
RF out and VDD
NOISE PARAMETERS VDD=5V, IDD=12mA Freq. (GHz) 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Γopt (MAG) (ANG) 0.793 0.670 0.582 0.526 0.492 0.475 0.468 0.464 0.458 0.441 0.408 0.352 0.266 0.212 0.202 13.4 26.9 38.5 54.4 69.1 84.7 101.6 120.1 140.4 162.9 -172.2 -144.5 -113.9 -88.5 -58.0 NFmin (dB) 0.78 0.84 0.90 0.97 1.03 1.09 1.16 1.22 1.28 1.35 1.41 1.47 1.54 1.60 1.66
Rn 0.47 0.39 0.34 0.27 0.23 0.19 0.14 0.10 0.07 0.05 0.05 0.07 0.11 0.16 0.23
GND
GND
RF in and VGG
GND
2
FMM5701X
24GHz Low Noise Amplifier MMIC
NOTES
3
FMM5701X
24GHz Low Noise Amplifier MMIC
CHIP OUTLINE
95 25 80 95 100 25
80
RF out
60
GND
195
40
450
10
195
GND
40
25
25
100
110
60
RF in
80
80
GND
195 Unit: µm
520
For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
• Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200
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