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FMM5701X Dataheets PDF



Part Number FMM5701X
Manufacturers Fujitsu Media Devices
Logo Fujitsu Media Devices
Description 24GHz Low Noise Amplifier MMIC
Datasheet FMM5701X DatasheetFMM5701X Datasheet (PDF)

FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB (Typ.) @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the 18-28GHz frequency range. This product is well suited for satellite communications and radio link applications where low noise and high gain is required. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent p.

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FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB (Typ.) @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the 18-28GHz frequency range. This product is well suited for satellite communications and radio link applications where low noise and high gain is required. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain Voltage Gate Voltage Storage Temperature Channel Temperature Symbol VDD VGG Tstg Tch Condition Rating 7.0 -3.0 -65 to +175 +175 Unit V V °C °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Conditions (2) Min. Limits Typ. Max. 1.5 1.8 Unit Noise Figure NF VDD = 5V ID=12mA f=24GHz dB Associated Gain Gas f=24GHz 12.0 13.5 - dB Note 1: RF parameters sample size 10pcs. criteria (accept/reject = (2/3) Note 2: Tuned for Γopt NOISE FIGURE & Gas vs. FREQUENCY VDD=5V, IDD=12mA (ZS=ZL=50Ω) (Tuned for Γopt) 10 9 8 30 25 Gas 20 15 Noise Figure (dB) 7 6 5 4 NF 3 2 1 0 10 12 14 16 18 20 22 24 26 28 5 0 -5 -10 -15 0 30 Frequency (GHz) Edition 1.2 January 2000 1 Gas (dB) 10 FMM5701X 24GHz Low Noise Amplifier MMIC S-PARAMETERS VDD = 5V, IDS = 12mA FREQUENCY (MHZ) 15000 16000 17000 18000 19000 20000 21000 22000 23000 24000 25000 26000 27000 28000 29000 30000 S11 MAG .469 .492 .512 .542 .568 .598 .615 .640 .663 .683 .702 .722 .732 .737 .756 .762 S21 ANG MAG 8.289 7.642 6.987 6.487 5.950 5.456 5.027 4.634 4.258 3.919 3.638 3.318 3.033 2.820 2.595 2.370 S12 ANG MAG .017 .018 .020 .021 .023 .025 .026 .028 .030 .032 .035 .038 .040 .044 .048 .051 S22 ANG 23.3 16.6 10.9 7.0 2.3 -3.6 -7.5 -10.9 -15.1 -17.9 -21.1 -27.0 -28.3 -31.7 -37.4 -40.3 MAG .350 .330 .311 .296 .287 .283 .273 .268 .265 .262 .265 .267 .265 .266 .271 .270 ANG -132.7 -138.4 -144.1 -149.0 -154.2 -160.2 -165.6 -170.8 -176.5 178.5 172.7 166.4 162.1 155.5 150.6 144.9 -131.8 -137.9 -145.8 -153.9 -162.7 -172.5 178.2 168.3 158.5 148.6 138.7 128.8 119.0 109.4 99.4 90.3 130.9 115.7 101.5 87.3 73.6 60.1 47.5 34.5 22.0 9.9 -2.2 -14.3 -25.1 -35.8 -47.7 -57.4 NOTE:* The data includes bonding wires. n: number of wires RF IN n=1 (0.3mm length, 25µm Dia Au wire) RF OUT n=1 (0.3mm length, 25µm Dia Au wire) GND n=6 (0.3mm length, 25µm Dia Au wire) Download S-Parameters, click here BONDING LAYOUT RF out and VDD NOISE PARAMETERS VDD=5V, IDD=12mA Freq. (GHz) 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Γopt (MAG) (ANG) 0.793 0.670 0.582 0.526 0.492 0.475 0.468 0.464 0.458 0.441 0.408 0.352 0.266 0.212 0.202 13.4 26.9 38.5 54.4 69.1 84.7 101.6 120.1 140.4 162.9 -172.2 -144.5 -113.9 -88.5 -58.0 NFmin (dB) 0.78 0.84 0.90 0.97 1.03 1.09 1.16 1.22 1.28 1.35 1.41 1.47 1.54 1.60 1.66 Rn 0.47 0.39 0.34 0.27 0.23 0.19 0.14 0.10 0.07 0.05 0.05 0.07 0.11 0.16 0.23 GND GND RF in and VGG GND 2 FMM5701X 24GHz Low Noise Amplifier MMIC NOTES 3 FMM5701X 24GHz Low Noise Amplifier MMIC CHIP OUTLINE 95 25 80 95 100 25 80 RF out 60 GND 195 40 450 10 195 GND 40 25 25 100 110 60 RF in 80 80 GND 195 Unit: µm 520 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4 25 .


MC33364 FMM5701X 2SA483


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