IRFR220, IRFU220
Data Sheet July 1999 File Number
2410.2
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSF...
