IRFR214B / IRFU214B
November 2001
IRFR214B / IRFU214B
250V N-Channel MOSFET
General Description
These N-Channel enhanc...
IRFR214B / IRFU214B
November 2001
IRFR214B / IRFU214B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
Features
2.2A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D D
!
●
◀
▲
● ●
G
S
D-PAK
IRFR Series
I-PAK
G D S
IRFU Series
G!
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
IRFR214B / IRFU214B 250 2.2 1.4 8.5 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
45 2.2 2.5 5.5 2.5 25 0.2 -55 to +150 300
TJ, Tstg TL
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering...