M464S3354BTS

256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 512Mb B-die 64-bit Non ECC Revision 1.2 March 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 March 2004 256MB, 512MB Unbuffered SODIMM Revision History Revision 1.0 (January, 2004) - First release Revision 1.1 (February, 2004) - Corrected typo. Revision 1.2 (March. 2004) - Corrected package dimension. SDRAM Rev. 1.2 March 2004 256MB, 512MB Unbuffered SODIMM 144Pin Unbuffered SODIMM based on 512Mb B-die(x8, x16) Ordering Information Part Number M464S3354BTS-C(L)7A M464S6554BTS-C(L)7A Density 256MB 512MB Organization 32M x 64 64M x 64 Component Composition 32Mx16(K4S511632B) * 4EA 32Mx16(K4S511632B) * 8EA Component Package 54-TSOP(II) SDRAM Height 1,000mil 1,250mil Operating Frequencies 7A @CL3 Maximum Clock Frequency CL-tRCD-tRP(clock) 133MHz(7.5ns) 3-3-3 @CL2 100MHz(10ns) 2-2-2 Feature Burst mode operation Auto & self refresh capability (8192 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8) Data scramble (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Serial presence detect with EEPROM Rev. 1.2 March 2004 256MB, 512MB Unbuffered SODIMM PIN CONFIGURATIONS (Front side/back side) Pin 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29...