Rectifiers
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
1N4001G to 1N4007G Rectifiers
Product specification Supe...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
1N4001G to 1N4007G Rectifiers
Product specification Supersedes data of April 1992 1996 May 24
Philips Semiconductors
Product specification
Rectifiers
FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Available in ammo-pack. DESCRIPTION
1N4001G to 1N4007G
This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
Rugged glass package, using a high temperature alloyed construction.
2/3 page k (Datasheet)
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G VR continuous reverse voltage 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G IF(AV) average forward current PARAMETER repetitive peak reverse voltage
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
MIN. − − − − − − − − − − − − − −
MAX. 50 100 200 400 600 800 1000 50 100 200 400 600 800 1000 V V V V V V V V V V V V V V
UNIT
averaged over any 20 ms period; Tamb = 75 °C; see Fig.2 averaged over any 20 ms period; Tamb = 100 °C; see Fig.2
− − − − − −65 −65
1.00 A 0.75 A 1.00 A 10 30 +175 +175 A A °C °C
IF IFRM IFSM Tstg Tj
continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature
Tamb = 75 °C; see Fig.2 half sinewave; 60 Hz
1996 May 24
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