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MTD20N06V

Part Number	MTD20N06V
Manufacturer	Motorola
Description	TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
Published	Oct 5, 2005
Detailed Description	MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N06V/D TMOS Power Field Effect Transisto...
Datasheet	MTD20N06V PDF File

Overview

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N06V/D TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs.
This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.
Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe...

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