MTD2955V

MTD2955V August 1999 DISTRIBUTION GROUP* MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • • • • -12 A, -60 V. RDS(ON) = 0.23 Ω @ VGS = -10 V Low gate charge. Fast switching speed. High performance technology for low RDS(ON). 6 * 6 72 ' * ' R $EVROXWH 0D[LPXP 5DWLQJV 6\PERO W '66 W *66 D' 9…hvT‚ˆ …prÃW‚y‡htr B h‡rT‚ˆ…prÃW‚y‡htr ÃÃÃÃÃÃà U &2!$ 8 ȁyr††Ã‚‡ur… v†rÁ‚‡rq 3DUDPHWHU 5DWLQJV % 8QLWV W W 6 ± !   H h‘v€ ˆ€ Ã9…hvÃ8ˆ……r‡ÃÃÃÃ8‚‡vˆ‚ˆ†ÃÃÃÃÃÃÃÃÃÃÃÃÃÃà I ‚‡rà ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃU & Ã2à H h‘v€ ˆ€ Ã9…hvÃ8ˆ……r‡ÃÃÃÃQˆy†rq  8ÃÃÃÃÃÃÃà I ‚‡rà  ! R ' #! Q' H h‘v€ ˆ€ ÃQ‚ r…Ã9v††vƒh‡v‚Ã5 ÃÃU & Ã2Ã!$ 8ÃÃÃÃÃÃÃÃà I ‚‡rà ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃU R R  h i % "( $ $$ǂà &$ X $Ã2Ã!$ R 8à ÃÃÃÃÃÃÃÃÃÃI ‚‡rà ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃU $ Ã2Ã!$ 8à ÃÃÃÃÃÃÃÃÃÃI ‚‡rà U -ÃU 67* P ƒr…h‡vtÃhqÃT‡‚…htrÃEˆp‡v‚ÃUr€ ƒr…h‡ˆ…rÃShtr °8 7KHUPDO &KDUDFWHULV...