RN6006

RN6006 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN6006 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Small flat package l PC = 1~2W (mounted on ceramic substrate) l Complementary to RN5006 Unit: mm Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 0.05g (typ.) ― SC-62 2-5K1A Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Collector power dissipation Junction temperature Storage temperature range DC Pulse (Note1) Symbol VCBO VCEO VEBO IC ICP IB PC PC * Tj Tstg Rating −10 −10 −6 −2 −4 −0.4 500 1000 150 −55~150 Unit V V V A A mW mW °C °C Marking < 10ms, duty cycle < Note: Pulse width = = 30 % * : Mounterd on ceramic substrate (250mm2 ´ 0.8t) 1 2001-10-29 RN6006 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-offcurrent Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Resistor Symbol ICBO IEBO V(BR)CES hFE (1) hFE (2) VCE (sat) fT Cob R Test Circuit ― ― ― ― ― ― ― ― Test Condition VCB = −10V, IE = 0 VEB = −6V, IC = 0 IC = −1mA VCE = −1V, IC = −0.5A VCE = −1V, IC = −4.0A IC = −2A, IB = −0.05A VCE = −1V, IC = −0.5A VCB = −10V, IE = 0, f = 1 MHz ― M...