M36L0R8060

M36L0R8060T0 M36L0R8060B0 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 64 Mbit (4Mb x16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VCCP = VDDQ = 1.7 to 1.95V – VPP = 9V for fast program ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M36L0R8060T0: 880Dh – Bottom Device Code M36L0R8060B0: 880Eh ■ PACKAGE – Compliant with Lead-Free Soldering Processes – Lead-Free Versions FLASH MEMORY ■ SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous Page Read mode – Random Access: 85ns ■ SYNCHRONOUS BURST READ SUSPEND ■ PROGRAMMING TIME – 10µs typical Word program time using Buffer Enhanced Factory Program command ■ MEMORY ORGANIZATION – Multiple Bank Memory Array: 16 Mbit Banks – Parameter Blocks (Top or Bottom location) ■ DUAL OPERATIONS – program/erase in one Bank while read in others – No delay between read and write operations ■ SECURITY – 64 bit unique device number – 2112 bit user programmable OTP Cells ■ Figure 1. Package FBGA TFBGA88 (ZAQ) 8 x 10mm BLOCK LOCKING – All blocks locked at power-up – Any combination of blocks can be locked with zero latency – WPF for Block Lock-Down – Absolute Write Protection with VPPF = VSS ■ COMMON FLASH INTERFACE (CFI) ■ 100,000 PROGRAM/ERASE CYCLES per BLOCK PSRAM ■ ACCESS TIME: 70ns ■ ASYN...