RF103L2S

RF103L2S Diodes Fast recovery Diode RF103L2S !Applications High frequency rectification !External dimensions (Unit : mm) !Features 1) Small power mold type (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss 1.5±0.2 CATHODE MARK 4.5±0.2 1.2±0.3 1 2 3 4 0.02 0.1 + −0.1 2.6±0.2 2.0±0.2 !Construction Silicon epitaxial planar ∗ 1 , 2 ···Type No. 3 , 4 ···Manufacturing date EX. RF101L2S EX. 2003,09 → → 6,6 3,9 !Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current ∗ Symbol VRM VR IO IFSM Tj Tstg Limits 200 200 1.0 20 150 −40 to +150 Unit V V A A °C °C Forward Peak surge current (60Hz 1cyc.) Junction temperature Storage temperature ∗ Mounting on glass epoxi board !Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Typ. 0.860 1.2 Max. 0.920 10 Unit V µA IF=1.0A VR=200V IF=0.5A Reverse recovery time trr 9 20 nS IR=1.0A Irr=0.25 IR Conditions 1/2 5.0±0.3 + RF103L2S Diodes !Electrical characteristic curves (Ta=25°C) AVERAGE RECTIFIED CURRENT : IO (A) 1 1000 125°C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 D=1/2 Sin(θ=180) DC IO 0A 0V VR t FORWARD CURRENT : IF (mA) REVERSE CURRENT : IR (µA) 100 75°C T 0.1 125°C D=t / T VR=200V Tj=150°C 10 25°C 1 0.01 75°C 25°C −25°C 0.1 −25°C 0.001 0 0.2 0.4 0.6 0.8 1 0.01 0 50 100 150 200 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) AM...