HY514400B

HY514400B 1Mx4, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time(50, 60 or 70ns) and package type(SOJ or TSOP-II) and power consumption (Normal or Low power with self refresh). Hyundai’s advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and high reliability. FEATURES Ÿ Fast Page Mode operation Ÿ Read-modify-write Capability Ÿ TTL compatible inputs and outputs Ÿ /CAS-before-/RAS, /RAS-only, Hidden and Self refresh capability Ÿ Max. Active power dissipation Speed 50 60 70 Ÿ Refresh cycle Part number HY514400B Refresh 1K Normal 16ms SL-part 128ms Power 550mW 495mW 440mW Ÿ JEDEC standard pinout Ÿ 20/26-pin SOJ (300mil) 20/26-pin TSOP-II (300mil) Ÿ Single power supply of 5V ± 10% Ÿ Early Write or output enable controlled write Ÿ Fast access time and cycle time Speed 50 60 70 tRAC 50ns 60ns 70ns tCAC 15ns 15ns 20ns tPC 35ns 40ns 45ns ORDERING INFORMATION Part Name HY514400BJ HY514400BLJ HY514400BSLJ HY514400BT HY514400BLT HY514400BSLT *SL : Low power with self refresh Refresh 1K 1K 1K 1K 1K 1K Power Package 20/26Pin SOJ L-part SL-part 20/26Pin SOJ 20/26Pin SOJ 20/26Pin TSOP-II L-part SL-part 20/...