64M (4M x 16) BIT FLASH MEMORY
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20886-1E
FLASH MEMORY
CMOS
64M (4M × 16) BIT
MBM29LV652UE -90/12
s GENERAL DESC...
Description
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20886-1E
FLASH MEMORY
CMOS
64M (4M × 16) BIT
MBM29LV652UE -90/12
s GENERAL DESCRIPTION
The MBM29LV652UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to MBM29LV652UEbe programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls. The MBM29LV652UE is entirely command set compatible with JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Typically, each sector can be programmed and verified in about 0.5 seconds.
s PRODUCT LINE UP
Part No. VCC = 3.3 V Ordering Part No. VCC = 3.0 V Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns)
+0.3 V –0.3 V +0.6 V –0.3 V
MBM29LV652UE 90 — 90 90 35 — 12 120 120 50
s PACKAGES
63-pin plastic FBGA
BGA-63P-M02
MBM29LV652UE-90/12
(Continued)
A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.) The device also features a sect...
Similar Datasheet