HY63V8400

HY63V8400 Series 512Kx8bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY63V8400 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8-bits. The HY63V8400 uses eight common input and output lines and has an output enable pin which operates faster than. address access time at read cycle. The device is fabricated using Hyundai's advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications FEATURES Single 3.3V±0.3V Power Supply Fully static operation and Tri-state output TTL compatible inputs and outputs Low data Retention Voltage: - 2.0V(min) –L-ver. Only Center Power/Ground Pin Configuration Standard pin configuration - 36pin 400mil SOJ - 44pin 400mil TSOP-ll Product No. HY63V8400 HY63V8400 HY63V8400 Supply Voltage(V) 3.3 3.3 3.3 Speed (ns) 10 12 15 Operation Current(mA) 200 190 180 Standby Current(mA) L 10 10 10 1 1 1 PIN CONNECTION A0 BLOCK DIAGRAM SENSE AMP ROW DECODER I/O1 OUTPUT BUFFER I/O8 A0 A1 A2 A3 A4 /CS I/O1 I/O2 Vcc Vss I/O3 I/O4 /WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 SOJ 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 NC A18 A17 A16 A15 /OE I/O8 I/O7 Vss Vcc I/O6 I/O5 A14 A13 A12 A11 A10 NC NC NC A0 A1 A2 A3 A4 /C S I/O1 I/O2 Vcc Vss I/O3 I/O4 /W E A5 A6 A7 A8 A9 NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 5 TSOP-II 3 34 33 32 31 30 ...