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STF7NK30Z

ST Microelectronics

N-CHANNEL MOSFET

STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH™ Power MOS...


ST Microelectronics

STF7NK30Z

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Description
STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH™ Power MOSFET Features Type VDSS RDS(on) max ID Pw STF7NK30Z t(s)STP7NK30Z STD7NK30Z 300 V 300 V 300 V < 0.9 Ω < 0.9 Ω < 0.9 Ω 5 A 20 W 5 A 50 W 5 A 50 W uc■ 100% avalanche tested rod■ Extremely high dv/dt capability P■ Gate charge minimized te■ Very low intrinsic capacitances le■ Very good manufacturing repeatability bsoApplications - O■ Switching application t(s)Description ucThe SuperMESH™ series is obtained through an dextreme optimization of ST’s well established rostrip-based PowerMESH™ layout. In addition to Ppushing on-resistance significantly down, special tecare is taken to ensure a very good dv/dt capability for the most demanding applications. leSuch series complements ST full range of high ovoltage Power MOSFETs including revolutionary ObsMDmesh™ products 3 2 1 TO-220FP 3 2 1 TO-220 3 1 DPAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes STD7NK30Z STF7NK30Z STP7NK30Z Marking D7NK30Z F7NK30Z P7NK30Z Package DPAK TO-220FP TO-220 Packaging Tape and reel Tube Tube March 2009 Rev 5 1/15 www.st.com 15 Electrical ratings 1 Electrical ratings STx7NK30Z Table 2. Absolute maximum ratings Symbol Parameter Value TO-220, DPAK TO-220FP Unit VDS Drain-source voltage (VGS = 0) 300 V VGS Gate- source voltage ± 30 V ID )ID t(sIDM (2) ducPTOT Drain current (continuous) at TC = 25 °C Drain current (continuous...




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