STS5NF60L

® STS5NF60L N - CHANNEL 60V - 0.045Ω - 5A SO-8 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STS5NF60L s s V DSS 60 V R DS(on) < 0.055 Ω ID 5A s TYPICAL RDS(on) = 0.045 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique " Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C o o Value 60 60 ± 20 5 3 20 2.5 Unit V V V A A A W IDM ( ) P tot () Pulse width limited by safe operating area December 1998 1/5 STS5NF60L THERMAL DATA R thj-amb Tj T stg (*)Thermal Resistance Junction-ambient Maximum Operating Junction Temperature Storage Temperature 50 150 -55 to 150 o C/W o C o C (*) Mounted on FR-4 board (t ≤ 10sec) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS ...