STS5NS150

N-CHANNEL 150V - 0.075 Ω - 5A SO-8 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE STS5NS150 s s s s STS5NS150 VDSS 150 V RDS(on) <0.1 Ω ID 5A TYPICAL RDS(on) = 0.075 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. SO-8 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot Tstg Tj May 2002 . Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Operating Junction Temperature Value 150 150 ± 20 5 3 20 2.5 0.02 -55 to 150 Unit V V V A A A W W/°C °C () Pulse width limited by safe operating area. 1/8 STS5NS150 THERMAL DATA Rthj-amb (*)Thermal Resistance Junction-ambient Max 50 °C/W (*) When mounted on FR-4 board with 0.5 in2 pad of Cu. AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive ...