SD1729

SD1729 (TH416) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 130 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1729 BRANDING TH416 PIN CONNECTION DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 70 35 4.0 12 175 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 1.0 °C/W 1/4 SD1729 (TH416) ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCES BVCEO BVEBO ICES hFE IC = 50 mA IC = 100 mA IE = 20 mA VCE = 35 V VCE = 5 V VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 7 A 70 35 4.0 — 18 — — — — — — — — 20 50 V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP IMD* ηc COB Note: * f1 f = 30 MHz POUT = 130 W PEP POUT = 130 W PEP POUT = 130 W PEP f = 1 MHz = 30.00 MHz, f2 VCE = 28 V VCE = 28 V VCE = 28 V VCE = 28 V VCB = 28 V ICQ = 150 mA ICQ = 150 mA ...