SD1731-14 (ST448)
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
. . . . . . .
PRELIMINARY DATA OPTIMIZED FOR SSB 30 M...
SD1731-14 (ST448)
RF & MICROWAVE
TRANSISTORS HF SSB APPLICATIONS
. . . . . . .
PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 250 W PEP WITH 12 dB GAIN
.50 0 4LF L (M17 4 ) epoxy sealed O R DE R CODE SD1731-14 BRANDING ST448
PIN CONNECTION
DESCRIPTION The SD1731 is a 50 V epitaxial silicon
NPN planar
transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (T case = 25° C)
Symbol Parameter Value Un it
1. Collector 2. Emitter
3. Base 4. Emitter
VCBO VCEO VEBO IC PDISS TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation (Theatsink ≤ 25°C) Junction Temperature Storage Temperature
110 55 4.0 20 257 +200 − 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c) RTH(c-s)
S e pte m ber 6, 1 99 6
Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance
0.48 0.2
°C/W °C/W
SD1731-14 (ST448)
ELECTRICAL SPECIFICATIONS STATIC (Tcase = 25°C)
S ym bo l Te s t C o n ditio n s Va lu e Min. Typ . Ma x. Un it
BVCBO BVCEO BVEBO ICEO ICES hFE
IC = 2 00 mA IC = 2 00 mA IE = 2 0 mA VC E = 30 V VC E = 55 V VC E = 6 V
IE = 0 mA IB = 0 mA IC = 0 mA IB = 0 mA VBE = 0V IC = 1 0 A
110 55 4.0 — — 5
— — — — — —
— — — 5 10 20
V V V mA mA —
DYNAMIC (Theatsink = 25°C)
S ym bo l Te s t C o nd itio ns Va lu e Min. Typ. Ma x. Un it
POUT GP * IMD* η c* COB
Note: *f 1
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