SD1733

SD1733 (TH513) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS COMMON EMITTER GOLD METALLIZATION P OUT = 75 W MIN. WITH 14.0 dB GAIN .380 4L STUD (M135) epoxy sealed ORDER CODE SD1733 BRANDING TH513 PIN CONNECTION DESCRIPTION The SD1733 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 110 55 4.0 3.25 127 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 2.0 °C/W 1/4 SD1733 (TH513) ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCES BVCEO BVEBO hFE IC = 100mA IC = 200mA IE = 10mA VCE = 6V VBE = 0V IB = 0mA IC = 0mA IC = 1.4A 110 55 4.0 19 — — — — — — — 50 V V V — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT G P* IMD* η c* COB Note: * f1 f = 30 MHz POUT = 75 W PEP POUT = 75 W PEP POUT = 75 W PEP f = 1 MHz = 30.00 MHz, f2 VCE = 50 V VCE = 50 V VCE = 50 V VCE = 50 V VCB = 50 V 75 14 — 37 — — — — — — — — −30 — 100 W dB dBc % pF = 30. 001 MHz 2/4 SD1733 (TH5...