MPS3904

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS3904/D General Purpose Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPS3904 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 60°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD PD TJ, Tstg Value 40 60 6.0 100 625 5.0 450 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C mW Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VEB(off) = 3.0 Vdc) Base Cutoff Current (VCE = 30 Vdc, VEB(off) = 3.0 Vdc) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBL 40 60 6.0 — — — — — 50 50 Vdc Vdc Vdc nAdc nAdc REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 MPS3904 ELECTRICAL CHA...