DatasheetsPDF.com

MP6759

Toshiba Semiconductor
Part Number MP6759
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Sep 29, 2005
Detailed Description MP6759 TOSHIBA GTR Module Silicon N Channel IGBT MP6759 Motor Control Applications High Power Switching Applications Un...
Datasheet PDF File MP6759 PDF File

MP6759
MP6759

Overview
MP6759 TOSHIBA GTR Module Silicon N Channel IGBT MP6759 Motor Control Applications High Power Switching Applications Unit: mm · · · · · The electrodes are isolated from case.
6 IGBTs are built into 1 package.
Enhancement-mode Low saturation voltage : VCE (sat) = 2.
7 V (max) (IC = 10 A) High speed: tf = 0.
35 µs (max) (IC = 10 A) JEDEC JEITA TOSHIBA ― ― 2-78A1A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― Weight: 44 g (typ.
) Rating 600 ±20 10 20 10 20 40 150 −40 to 125 2500 (AC 1 minute) 1.
5 Unit V V A Forward current A Collector power dissipation (Tc = ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)