TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY100N10E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTY100N10E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient desig...
