TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTY10N100E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performanc...
