TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY14N100E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTY14N100E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient desig...
