TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY16N80E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTY16N80E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance ...
